丝印：150N100；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

Description The RM150N100AHD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：498.23 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：150N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

文件：380.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：150N100；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：276.21 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：150N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM150N100T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：242.2 Kbytes 页数：9 Pages

RECTRON

丽正国际