500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

文件：71.98 Kbytes 页数：3 Pages

MCC

Thick Film Chip Resistors

文件：1.01135 Mbytes 页数：13 Pages

ETCList of Unclassifed Manufacturers

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Thick Film Chip Resistors

文件：589.52 Kbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

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HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF ................................................................ 1200A ● VRRM ...................................................... 1700V ● Insulated Type ● 2-element in a Pack ● Copper Baseplate APPLICATION Traction drives, High Reliability

文件：74.97 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF ................................................................ 1200A ● VRRM ...................................................... 3300V ● Insulated Type ● 2-element in a Pack ● Copper Baseplate APPLICATION Traction drives, High Reliability

文件：77.99 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF ................................................................ 1200A ● VRRM ...................................................... 3300V ● High Insulated Type ● 2-element in a Pack ● AlSiC Baseplate APPLICATION Traction drives, High Reliabil

文件：79.7 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

文件：71.98 Kbytes 页数：3 Pages

MCC

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF ................................................................ 1200A ● VRRM ...................................................... 3300V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability C

文件：68.7 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

丝印：CN30；Package：PDFN3X3-8L；N-Channel Enhancement MOSFET

Feature 30V,120A Rds (on)

文件：236.51 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：120N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N30T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

文件：217.33 Kbytes 页数：8 Pages

RECTRON

丽正国际