HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 100A • VRRM Repetitive peak reverse voltage ................400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

文件：44.35 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 100A • VRRM Repetitive peak reverse voltage ................400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

文件：51.38 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 100A • VRRM Repetitive peak reverse voltage ................400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

文件：44.35 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current ................................ 100A • VRRM Repetitive peak reverse voltage .......... 600/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

文件：47.75 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

丝印：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N40DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

文件：2.08748 Mbytes 页数：8 Pages

RECTRON

丽正国际

丝印：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =40V,ID =100A RDS(ON)

文件：1.02413 Mbytes 页数：8 Pages

RECTRON

丽正国际

丝印：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：346 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：1.44149 Mbytes 页数：6 Pages

RECTRON

丽正国际

丝印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：158.88 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：224.17 Kbytes 页数：6 Pages

RECTRON

丽正国际