RM100DZ-M

HIGH POWER GENERAL USE INSULATED TYPE

HIGHPOWERGENERALUSEINSULATEDTYPE •IF(AV)Averageforwardcurrent..........100A •VRRMRepetitivepeakreversevoltage................400/800V •DOUBLEARMS •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION ACmotorcontrollers,DCmotorcon

RM100DZ-M

HIGH POWER GENERAL USE INSULATED TYPE

HIGHPOWERGENERALUSEINSULATEDTYPE •IF(AV)Averageforwardcurrent..........100A •VRRMRepetitivepeakreversevoltage................400/800V •DOUBLEARMS •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION ACmotorcontrollers,DCmotorcon

RM100HA-XXF

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE •IDCDCcurrent................................100A •VRRMRepetitivepeakreversevoltage..........600/1000/1200V •trrReverserecoverytime.............0.8µs •InsulatedType •ULRecognized YellowCardNo.E80276(N)

RM100N40DF

Marking：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N40DFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=40V,ID=100A RDS(ON)

RM100N40DFV

Marking：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=40V,ID=100A RDS(ON)

RM100N60AT2

Marking：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60AT2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)

RM100N60BT2

Marking：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60BT2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)

RM100N60DF

Marking：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60DFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=65V,ID=95A RDS(ON)

RM100N60DFV

Marking：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60DFVusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=65V,ID=95A RDS(ON)

RM100N60HD

Marking：100N60；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60HDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)