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STLC3055Q

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STLC3055QTR

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STU3055NL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STUD3055L

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

T3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TIP3055

SILICONPOWERTRANSISTORS

PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto

COMSET

Comset Semiconductor

TIP3055

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TIP3055

SiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP3055

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
ROHM/罗姆
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ROHM
23+
SOT-252
3551
专业优势供应
询价
ROHM
24+
SOT-252
25000
一级专营品牌全新原装热卖
询价
ROHM
2406+
SOT-252
6598
优势代理渠道,原装现货,可全系列订货
询价
VBSEMI/台湾微碧
24+
TO-252
60000
询价
ROCKCHIP
2016+
BGA
6523
房间原装进口现货假一赔十
询价
ROCKCHIP
BGA
3200
原装长期供货!
询价
RACKCHIP
2016+
BGA
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
ROCKCHI
2020+
BGA
402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ROCKCHIP
17+
NA
6200
100%原装正品现货
询价
更多RK3055ETLMOS供应商 更新时间2025-5-19 11:00:00