RJQ6003DPM中文资料下载供应商报价瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJQ6003DPM	文件：110 Kbytes Page：9 Pages	600V - 20A - IGBT and Diode High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω 文件：110 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJQ6003DPM-00T0	文件：110 Kbytes Page：9 Pages	600V - 20A - IGBT and Diode High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω 文件：110 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJQ6003DPM_15	文件：110 Kbytes Page：9 Pages	600V - 20A - IGBT and Diode High Speed Power Switching 文件：110 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJQ6003DPM	文件：300 bytes Page：1 Pages	IGBTs	Renesas 瑞萨	Renesas

更多RJQ6003DPM供应商更新时间2025-12-1 15:00:00