600V - 20A - IGBT and Diode High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω

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RENESAS

瑞萨

SOT323

罗姆

上传：深圳庞田科技有限公司

UMT3

ROHM/罗姆

上传：佛山市芯光达科技有限公司