RJP60F5DPK

600V - 40A - IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,Ta=25°C,inductiveload)

RJP60F5DPM

600 V - 40 A - IGBT High Speed Power Switching

600V-40A-IGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Trenchgateandthinwafertechnology Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,

RJP60F5DPK_15

600V - 40A - IGBT High Speed Power Switching

RJP60F5DPM_15

600V - 40A - IGBT High Speed Power Switching

RJP60F5DPK-01#T0

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 260.4W

Renesas Electronics America Inc

RJP60F5DPM-00#T1

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 45W TO-3PFM

Renesas Electronics America Inc

RJH60F5

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5

600V-40A-IGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode