丝印：RJL；Package：SOD-123FA；Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V - 1000 V

Features • Glass Passivated Chip Junction • Fast Switching for High Efficiency • High Surge Capacity • Low Forward Voltage: 1.3 V Maximum • UL Flammability 94V−0 Classification • MSL 1 per J−STD−020 • RoHS Compliant / Green Molding Compound • Industrial Device Qualified per AEC−Q101 Standa

文件：237.22 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：RJL；Package：SOD-123FA；Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V - 1000 V

Features • Glass Passivated Chip Junction • Fast Switching for High Efficiency • High Surge Capacity • Low Forward Voltage: 1.3 V Maximum • UL Flammability 94V−0 Classification • MSL 1 per J−STD−020 • RoHS Compliant / Green Molding Compound • Industrial Device Qualified per AEC−Q101 Standa

文件：237.22 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon N Channel MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching

文件：211.92 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching

文件：189.25 Kbytes 页数：6 Pages

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500V - 14A - MOS FET High Speed Power Switching

Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.42  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

文件：171.36 Kbytes 页数：7 Pages

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500 V - 14 A - MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：94.14 Kbytes 页数：7 Pages

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500V - 19A - MOS FET High Speed Power Switching

Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

文件：172.22 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features ● Built-in fast recovery diode ● Low on-resistance RDS(on) = 0.14 Ω typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25°C) ● Low leakage current ● High speed switching

文件：173.96 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features ● Built-in fast recovery diode ● Low on-resistance RDS(on) = 0.14 Ω typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25°C) ● Low leakage current ● High speed switching

文件：173.96 Kbytes 页数：4 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching

文件：187.17 Kbytes 页数：6 Pages

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