RJL5013DPP

Silicon N Channel MOS FET High Speed Power Switching

Features •Built-infastrecoverydiode •Lowon-resistance •Lowleakagecurrent •Highspeedswitching

RJL5013DPP-A0

500V - 14A - MOS FET High Speed Power Switching

Features Built-infastrecoverydiode Lowon-resistance RDS(on)=0.42typ.(atID=7A,VGS=10V,Ta=25C) Lowleakagecurrent Highspeedswitching Qualitygrade:Standard

RJL5013DPP-E0

500 V - 14 A - MOS FET High Speed Power Switching

Features •Built-infastrecoverydiode •Lowon-resistance RDS(on)=0.42Ωtyp.(atID=7A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJL5013DPP-E0_15

500 V - 14 A - MOS FET High Speed Power Switching

RL-5013

COMMONMODETOROIDSVERTICALMOUNT

S5013

ISDNS-INTERFACETRANSFORMER

SF5013

945.00MHZSAWFILTER

945.00MHZSAWFILTER •DesignedtoEGMSRxSelectivityin945.00MHz •Low-Loss,HighAttenuation •SimpleExternalImpedanceMatching •UltraMiniatureCeramicDCC6SMDPackage •ComplieswithDirective2002/95/EC(RoHSCompliant)

SFT5013

0.5AMP,800??900VoltsNPNTransistor

SI5013

OC-12/3,STM-4/1SONET/SDHCDRICWITHLIMITINGAMPLIFIER

SI5013

OC-12/3,STM-4/1SONET/SDHCDRICWITHLIMITINGAMPLIFIER