Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.05 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：74.03 Kbytes 页数：4 Pages

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500V - 6A - MOS FET High Speed Power Switching

Features  Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

文件：171.41 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：104.33 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：83.9 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：82.61 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：82.61 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：83.9 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：111.64 Kbytes 页数：7 Pages

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