80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching

Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting

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RENESAS

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80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching

文件：154.28 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 80V 35A 8.9Mohm Lfpak

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Low drive current\n• Low on-resistanceRDS(on) = 6.9 mΩ typ. (at VGS = 10 V)\n• Pb-free\n• Halogen-free\n• High density mounting;

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SAW Filter 70MHz 24MHz BW (SMD 13.3횞6.5 mm)

文件：310.26 Kbytes 页数：7 Pages

TAI-SAW

嘉硕科技

SMD 5.0x3.2 80MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Description and Applications: Surface mount 5.0mmx3.2mm crystal unit for use in wireless telecommunications devices, especially for a need of ultra miniatu

文件：190.26 Kbytes 页数：5 Pages

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嘉硕科技

All Dimension In MM

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E-SWITCH