isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

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杜因特

Silicon N Channel Power MOS FET High Speed Power Switching

文件：87.06 Kbytes 页数：7 Pages

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Silicon N Channel Power MOS FET High Speed Power Switching

文件：99.97 Kbytes 页数：7 Pages

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Silicon N Channel Power MOS FET High Speed Power Switching

文件：98.79 Kbytes 页数：7 Pages

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Silicon N Channel Power MOS FET High Speed Power Switching

文件：87.06 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET High Speed Power Switching

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