Silicon N Channel Power MOS FET

文件：148.51 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-Channel MOSFET uses advanced trench technology

文件：1.36672 Mbytes 页数：4 Pages

DOINGTER

杜因特

Silicon N Channel Power MOS FET Power Switching

文件：148.51 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET

文件：148.51 Kbytes 页数：7 Pages

RENESAS

瑞萨

30V, 30A, 6.5mmax.N Channel Power MOS FET

文件：143.13 Kbytes 页数：7 Pages

RENESAS

瑞萨

30V, 30A, 6.5m廓max. N Channel Power MOS FET High Speed Power Switching

文件：143.13 Kbytes 页数：7 Pages

RENESAS

瑞萨

30V, 30A, 6.5mmax.N Channel Power MOS FET

文件：143.13 Kbytes 页数：7 Pages

RENESAS

瑞萨

Nch Single Power Mosfet 30V 25A 6.3Mohm HWSON-8

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Capable of 4.5 V gate drive\n• Low drive current\n• High density mounting\n• Low on-resistanceRDS(on) = 5.2 mΩ typ. (at VGS = 10 V)\n• Pb-free\n• Halogen-free;

Renesas

瑞萨

Nch Single Power Mosfet 30V 30A 6.5Mohm Wpak

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Capable of 4.5 V gate drive\n• Low drive current\n• High density mounting\n• Low on-resistance\n• Pb-free\n• Halogen-free\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日RJK03M5DPA Data;

Renesas

瑞萨