isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-Channel MOSFET 60 V, 80 A, 5.2 mΩ

Features • High speed switching • Low drive current • Low on-resistance RDS(on) = 4.1 mΩ typ. (at VGS = 10 V) • Package TO-220ABA • Quality Grade : Standard

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N-Channel MOS FET 60 V, 80 A, 5.2 m

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N-Channel MOS FET 60 V, 80 A, 5.2 m?

文件：88.32 Kbytes 页数：7 Pages

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N-Channel MOS FET 60 V, 80 A, 5.2 m

文件：88.32 Kbytes 页数：7 Pages

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N-Channel Mosfet 60 V, 80 A, 5.2 MΩ

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Low drive current\n• Low on-resistance RDS(on) = 4.1 mΩ typ. (at VGS = 10 V)\n• Package TO-220ABA\n• Quality Grade : Standard\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK0603DP;

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