RJH60F5BDPQ-A0

600V - 40A - IGBT High Speed Power Switching

Features ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiodeinonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching tf=68nstyp.(atIC=30A,VCE=400V,VGE=1

RJH60F5BDPQ-A0_15

600V - 40A - IGBT High Speed Power Switching

RJH60F5BDPQ-A0#T0

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 260.4W TO-247A

Renesas Electronics America Inc

RJH60F5

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5

600V-40A-IGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode

RJP60F5DPK

600V-40A-IGBTHighSpeedPowerSwitching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,Ta=25°C,inductiveload)

RJP60F5DPM

600V-40A-IGBTHighSpeedPowerSwitching

600V-40A-IGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Trenchgateandthinwafertechnology Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,