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RFM15N15

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:283.25 Kbytes 页数:2 Pages

ISC

无锡固电

RFM18N08

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件:38.36 Kbytes 页数:5 Pages

Intersil

RFM18N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:284.54 Kbytes 页数:2 Pages

ISC

无锡固电

RFM18N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:284.54 Kbytes 页数:2 Pages

ISC

无锡固电

RFM18N10

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件:38.36 Kbytes 页数:5 Pages

Intersil

RFM10N12

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFM10N12

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFM10N15

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFM10N15

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFM110

Embedded EEPROM

文件:682.57 Kbytes 页数:18 Pages

HOPE

华普微

详细参数

  • 型号:

    RFM1

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
24+
N/A
2000
询价
MOSPEC
20+
TO-3
35830
原装优势主营型号-可开原型号增税票
询价
HARRIS(哈利斯)
20+
TO-3
3000
询价
Harris Corporation
25+
860000
只做原厂原装正品
询价
HARRIS
25+
N/A
174
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
HARRIS
16+
NA
8800
原装现货,货真价优
询价
ISC/固电
23+
TO-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
HAR
2023+
3000
进口原装现货
询价
HARRIS
94+
174
优势货源原装正品
询价
HARRIS
24+
6000
原装现货,特价销售
询价
更多RFM1供应商 更新时间2025-12-22 16:00:00