RFD8P06ESM中文资料INTERSIL数据手册PDF规格书

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Features

• 8A, 60V

• rDS(ON) = 0.300Ω

• Temperature Compensating PSPICE® Model

• 2kV ESD Protected

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”