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RFD8P06ESM

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06ESM

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD8P06LE

8A,60V,0.300Ohm,ESDRated,LogicLevel,P-ChannelPowerMOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06LESM

8A,60V,0.300Ohm,ESDRated,LogicLevel,P-ChannelPowerMOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06TM

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

RFP8P06E

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP8P06E

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFP8P06LE

8A,60V,0.300Ohm,ESDRated,LogicLevel,P-ChannelPowerMOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

TS8P06G

SinglePhase8.0AMPS.GlassPassivatedBridgeRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TS8P06G

SinglePhase8.0Amps.GlassPassivatedBridgeRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

详细参数

  • 型号:

    RFD8P06ESM

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
INTERSIL
24+
5000
只做原厂渠道 可追溯货源
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
24+
TO-252
36800
询价
INFINEON
23+
TO252
1250
特价库存
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
F
23+
TO-252A
8560
受权代理!全新原装现货特价热卖!
询价
HAR
23+
RFD8P06ESM
13528
振宏微原装正品,假一罚百
询价
RENESAS
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
RENESAS
18+
TO-252
41200
原装正品,现货特价
询价
INTERSIL
08+
TO-252
2500
普通
询价
更多RFD8P06ESM供应商 更新时间2025-7-23 13:40:00