| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：416.36 Kbytes 页数：8 Pages | Fairchild 仙童半导体 | Fairchild | ||
N-Channel Logic Level Power MOSFET These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：1.37302 Mbytes 页数：8 Pages | Fairchild 仙童半导体 | Fairchild | ||
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：86.26 Kbytes 页数：8 Pages | Intersil | Intersil | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：309.53 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：299.58 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N-Channel Logic Level Power MOSFET These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：1.37302 Mbytes 页数：8 Pages | Fairchild 仙童半导体 | Fairchild | ||
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：86.26 Kbytes 页数：8 Pages | Intersil | Intersil | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) 文件：780.09 Kbytes 页数：5 Pages | Bychip 百域芯 | Bychip | ||
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：416.36 Kbytes 页数：8 Pages | Fairchild 仙童半导体 | Fairchild | ||
N-Channel Logic Level Power MOSFET These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：1.37302 Mbytes 页数：8 Pages | Fairchild 仙童半导体 | Fairchild |
技术参数
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±16
- VGS(th) Max (V)：
3
- ID Max (A)：
11
- PD Max (W)：
38
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
107
- Qg Typ @ VGS = 10 V (nC)：
5.2
- Ciss Typ (pF)：
350
- Package Type：
DPAK-3/TO-252-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
20300 |
ONSEMI/安森美原装特价RFD3055LESM即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
NK/南科功率 |
2025+ |
TO-252 |
2500 |
国产南科平替供应大量 |
询价 | ||
24+ |
N/A |
5000 |
公司存货 |
询价 | |||
HARRIS |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
FSC |
23+ |
RFD3055LESM |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
FSC进口原 |
25+23+ |
TO-252 |
22376 |
绝对原装正品全新进口深圳现货 |
询价 | ||
HARRIS |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
45633 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO252 |
30000 |
原装现货,假一赔十. |
询价 |
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