QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

文件：317.67 Kbytes 页数：18 Pages

RFMD

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QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

文件：317.67 Kbytes 页数：18 Pages

RFMD

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QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

文件：610.01 Kbytes 页数：26 Pages

RFMD

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QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

文件：610.01 Kbytes 页数：26 Pages

RFMD

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QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

文件：567.28 Kbytes 页数：26 Pages

RFMD

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QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

文件：567.28 Kbytes 页数：26 Pages

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DUAL-BAND GSM/DCS POWER AMP MODULE

Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th

文件：101.47 Kbytes 页数：8 Pages

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HIGH REPEATABILITY ULTRAMINIATURE T0-5 RF BYPASS RELAY DC TO 3 GHz

文件：117.12 Kbytes 页数：4 Pages

TELEDYNE

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HIGH REPEATABILITY ULTRAMINIATURE T0-5 RF BYPASS RELAY DC TO 3 GHz

文件：117.12 Kbytes 页数：4 Pages

TELEDYNE

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TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

文件：220.62 Kbytes 页数：10 Pages

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