3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode

文件：118.36 Kbytes 页数：6 Pages

RFMD

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3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V

文件：117.07 Kbytes 页数：6 Pages

RFMD

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3V 1700MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V

文件：116.68 Kbytes 页数：6 Pages

RFMD

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3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

文件：124.01 Kbytes 页数：6 Pages

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TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

文件：195.78 Kbytes 页数：10 Pages

RFMD

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TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

文件：195.78 Kbytes 页数：10 Pages

RFMD

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TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes

文件：198.16 Kbytes 页数：12 Pages

RFMD

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TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes

文件：198.16 Kbytes 页数：12 Pages

RFMD

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3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3

文件：118.76 Kbytes 页数：6 Pages

RFMD

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3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3

文件：118.76 Kbytes 页数：6 Pages

RFMD

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