RF3100-3中文资料威讯联合数据手册PDF规格书

Product Description

The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3100-3 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.

特性 Features

• Input/Output Internally Matched@50Ω

• Single 3V Supply

• 28dBm Linear Output Power

• -141dBm/Hz Noise Power

• 35 Linear Efficiency

• 45mA Idle Current (Low Power Mode)

Typical Applications

• 3V CDMA US-PCS Handsets

• 3V CDMA2000/1X PCS Handsets

• Spread-Spectrum Systems

• Designed for Compatibility with Qualcomm Chipsets