QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

文件：610.01 Kbytes 页数：26 Pages

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900/DCS/PCS POWER AMPLIFIER MODULE

Product Description\nThe RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium\nArsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which „Linear EDGE and GSM Operation\n„PowerStar® GSM/GPRS Power Control\n„Digital Band Select Enables a Single PA Lineup\n„Single Supply Voltage; Requires no External Refer ence Voltage\n„Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage\n„Low Power Mode for Reduced EDGE ;

Qorvo

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

文件：610.01 Kbytes 页数：26 Pages

RFMD

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4.5廓 Dual SPDT Analog Switch in 12-pin TDFN

文件：421.73 Kbytes 页数：10 Pages

SGMICRO

圣邦股份

4.5廓 Dual SPDT Analog Switch in 12-pin TDFN

文件：421.73 Kbytes 页数：10 Pages

SGMICRO

圣邦股份

Crystal Unit 2.0x1.2 Tuning Fork 32.768KHz

Features: Ceramic Seam Weld Package Excellent Reliability Performance Ultra Miniature Package Available to Surface Mount Technology and IR Reflow Process Moisture Sensitivity Level (MSL) : Level-1 Description and Applications: Surface mount 2.0mmx1.2mm crystal unit for use in communicatio

文件：249.41 Kbytes 页数：7 Pages

TAI-SAW

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