QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3166 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifie

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RFMD

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QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

文件：390.07 Kbytes 页数：16 Pages

RFMD

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3.3GHz to 3.6GHz 2W POWER AMPLIFIER

Product Description RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an id

文件：331.05 Kbytes 页数：12 Pages

RFMD

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3.3-3.6GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with

文件：355.69 Kbytes 页数：9 Pages

SIRENZA

3.3GHz to 3.6GHz 2W POWER AMPLIFIER

Product Description RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an id

文件：331.05 Kbytes 页数：12 Pages

RFMD

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