3.3GHz to 3.6GHz 2W POWER AMPLIFIER

Product Description RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an id

文件：331.05 Kbytes 页数：12 Pages

RFMD

威讯联合

3.3-3.6GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with

文件：355.69 Kbytes 页数：9 Pages

SIRENZA

3.3-3.6GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with

文件：355.69 Kbytes 页数：9 Pages

SIRENZA

3.3 - 3.6 GHz, 2 Watt Power Amplifier

Qorvo's portfolio of leading edge products for applications is enhanced with the introduction of the new SZM-3166Z high linearity 3.3-3.6 GHz 2W power amplifier. The SZM-3166Z offers a cost effective solution to more expensive FET based solutions. With only 7.5 dB of backoff from P1dB the SZM-3166Z • High gain accommodates all Tx/Rx chip sets\n• +27 dBm linear power for OFDM modulation\n• Active bias with adjustable Iq current\n• Flexible power up / down control for each gain stage\n• On chip power detector;

Qorvo

威讯联合