DUAL-BAND GSM/DCS POWER AMP MODULE

Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th

文件：101.47 Kbytes 页数：8 Pages

RFMD

威讯联合

DUAL-BAND GSM/DCS POWER AMP MODULE

Qorvo

威讯联合

DUAL-BAND GSM/DCS POWER AMP MODULE

Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th

文件：101.47 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel SiC power MOSFET

文件：738.67 Kbytes 页数：14 Pages

ROHM

罗姆

Automotive Grade N-channel SiC power MOSFET

Features 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery Application ・Automobile ・Switch mode power supplies

文件：1.0066 Mbytes 页数：14 Pages

ROHM

罗姆

Industrial Inductive Load Driver

This micro−integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates,

文件：272.93 Kbytes 页数：11 Pages

ONSEMI

安森美半导体