WIDEBAND GENERAL PURPOSE AMPLIFIER

Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF

文件：189.79 Kbytes 页数：10 Pages

RFMD

威讯联合

WIDEBAND GENERAL PURPOSE AMPLIFIER

Qorvo

威讯联合

WIDEBAND GENERAL PURPOSE AMPLIFIER

Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF

文件：189.79 Kbytes 页数：10 Pages

RFMD

威讯联合

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

文件：69.3 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：423.2 Kbytes 页数：22 Pages

TI

德州仪器

DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：423.2 Kbytes 页数：22 Pages

TI

德州仪器