GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

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RFMD

威讯联合

P-Channel Enhancement Mode Power MOSFET

General Features VDS = -12V,ID = -6A RDS(ON)

文件：669.53 Kbytes 页数：7 Pages

RECTRON

丽正

P-Channel Enhancement Mode Power MOSFET

General Features VDS = -12V,ID = -6A RDS(ON)

文件：504.65 Kbytes 页数：7 Pages

RECTRON

丽正

Chip LED

文件：205.31 Kbytes 页数：4 Pages

AUK