GENERAL PURPOSE AMPLIFIER

Product Description The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：40.87 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

文件：177.71 Kbytes 页数：8 Pages

RFMD

威讯联合

N-Channel 30 V (D-S) MOSFET

文件：240.63 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement MOSFET

文件：413.14 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

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VBSEMI

微碧半导体