GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

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RFMD

威讯联合

GENERAL PURPOSE LOW-NOISE AMPLIFIER

文件：241.65 Kbytes 页数：10 Pages

RFMD

威讯联合

GENERAL PURPOSE LOW-NOISE AMPLIFIER

文件：327.75 Kbytes 页数：8 Pages

RFMD

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N-Channel Enhancement Mode Power MOSFET

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RECTRON

丽正

N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

FEATURES RDS(ON)

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RECTRON

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

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TOSHIBA

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