HIGH ISOLATION BUFFER AMPLIFIER

Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to high

文件：198.1 Kbytes 页数：10 Pages

RFMD

威讯联合

HIGH ISOLATION BUFFER AMPLIFIER

Qorvo

威讯联合

HIGH ISOLATION BUFFER AMPLIFIER

Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to high

文件：198.1 Kbytes 页数：10 Pages

RFMD

威讯联合

P-Channel Enhancement Mode Power MOSFET

文件：279.27 Kbytes 页数：7 Pages

RECTRON

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P-Channel Enhancement Mode Mosfet

Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter.

文件：351.83 Kbytes 页数：5 Pages

RECTRON

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P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID =-2.6A RDS(ON)

文件：272.13 Kbytes 页数：7 Pages

RECTRON

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