Wirewound Resistors, Industrial Power, Tubular, Roundwire (RD), Fixed (RDEF, RDSF)

文件：92.13 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 3.6 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

文件：228.68 Kbytes 页数：7 Pages

RENESAS

瑞萨

0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER

Features • Ultra Low Forward Voltage Drop • Superior Reverse Avalanche Capability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • +150°C Operating Junction Temperature • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

文件：101.9 Kbytes 页数：4 Pages

DIODES

美台半导体

0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER

文件：349.62 Kbytes 页数：5 Pages

DIODES

美台半导体