Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 3.6 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

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RENESAS

瑞萨

0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER

Features • Ultra Low Forward Voltage Drop • Superior Reverse Avalanche Capability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • +150°C Operating Junction Temperature • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

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DIODES

美台半导体

0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER

文件：349.62 Kbytes 页数：5 Pages

DIODES

美台半导体

0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER

Description and Applications Packaged in X1-DFN1006-2 (SWP) (Type C) package, provides very low VF and excellent reverse-leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode or blocking diode in: • DC-DC Converters • AC-DC Adaptors Features and Benefits

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DIODES

美台半导体