首页 >RCJ120N20TL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RohmSemiconductor |
2019+ |
SC-83 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
Rohm |
20+ |
N/A |
1000 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ROHM/罗姆 |
2021+ |
LPTS |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ROHM |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Rohm Semiconductor |
21+ |
6-TSSOP,SC-88,SOT-363 |
6000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
Rohm Semiconductor |
22+ |
SC83 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ROHM/罗姆 |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ROHM |
TO-263 (D2PAK) |
瑞智芯 只做原装 |
1000 |
询价 | |||
ROHM |
21+ |
TO-263 (D2PAK) |
1000 |
全新原装鄙视假货15118075546 |
询价 | ||
Rohm Semiconductor |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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