Metal Oxide Semiconductor Field Effect Transistor

文件：1.30327 Mbytes 页数：12 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

文件：338.17 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道功率 MOSFET

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. • Improved hard commutation ruggedness \n• Optimized hard switching behavior \n• Industry’s lowest R ds(on), Q g and Q rr \n• RoHS compliant - halogen free\n\n优势:\n• Highest system reliability\n• System cost reduction\n• Highest efficiency and power density\n• Easy-to-design products;

Infineon

英飞凌

PolarHT HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savings

文件：601.57 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applicatio

文件：48.08 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.53 Kbytes 页数：2 Pages

ISC

无锡固电