首页 >RC9003>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3A2GSPSwitchedSocketwithDualUSBAC20VDC2.25A DESCRIPTION 13A2GSPSwitchedSocketwithDualUSBA+C20VDC2.25A (Max.45W)withOutboardRockers | KNIGHTSBRIDGE ML Accessories Limited. | KNIGHTSBRIDGE | ||
RFHybridLinearizers | SPECTRUM Spectrum Instrumentation GmbH | SPECTRUM | ||
RFHybridLinearizers2.5dBChangeperControlVolt | APITECH API Technologies Corp | APITECH | ||
TMR9003TMRLinearSensor FeaturesandBenefits TunnelingMagnetoresistance(TMR)Technology HighSensitivity(~30mV/V/Oe) Ultra-lowNoiseSpectralDensity(750pT/√Hz @1Hz) Very-lowPowerConsumption ExcellentThermalStability LowHysteresis CompatiblewithWideRangeofSupplyVoltages Noneedf | MULTIDIMENSIONMultiDimension Technology Co.,Ltd. 多维科技江苏多维科技有限公司 | MULTIDIMENSION | ||
MOSFETsSiliconN-channelMOS Applications •ORingCircuits •PowerManagementSwitches Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.1mΩ(typ.)(VGS=4.5V) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (3)Enhancementmode:Vth=1.3to2.3V(VDS=10V,ID=1.0mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconN-channelMOS(U-MOS-H) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
.040NPNPhototransistors PRODUCTDESCRIPTION AmediumareahighsensitivityNPNsiliconphototransistorinarecessedTO-106ceramicpackage.Thechipisprotectedwithalayerofclearepoxy.Thebaseconnectionisbroughtoutallowingconventionaltransistorbiasing.ThesedevicesarespectrallymatchedtoanyofPerki | PerkinElmer PerkinElmer Optoelectronics | PerkinElmer | ||
SolutionsforMobilePhoneAntennas | pulse Pulse A Technitrol Company | pulse | ||
LowlossMiniCoaxJumperCable | pulse Pulse A Technitrol Company | pulse | ||
LOWLOSSMINICOAXJUMPERCABLE | pulse Pulse A Technitrol Company | pulse |
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