TMR9003

TMR9003 TMR Linear Sensor

FeaturesandBenefits TunnelingMagnetoresistance(TMR)Technology HighSensitivity(~30mV/V/Oe) Ultra-lowNoiseSpectralDensity(750pT/√Hz @1Hz) Very-lowPowerConsumption ExcellentThermalStability LowHysteresis CompatiblewithWideRangeofSupplyVoltages Noneedf

TPHR9003NC

MOSFETsSiliconN-channelMOS

Applications •ORingCircuits •PowerManagementSwitches Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.1mΩ(typ.)(VGS=4.5V) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (3)Enhancementmode:Vth=1.3to2.3V(VDS=10V,ID=1.0mA)

TPHR9003NL

SiliconN-channelMOS(U-MOS-H)

VTT9003

.040NPNPhototransistors

PRODUCTDESCRIPTION AmediumareahighsensitivityNPNsiliconphototransistorinarecessedTO-106ceramicpackage.Thechipisprotectedwithalayerofclearepoxy.Thebaseconnectionisbroughtoutallowingconventionaltransistorbiasing.ThesedevicesarespectrallymatchedtoanyofPerki

W9003

SolutionsforMobilePhoneAntennas

W9003

LowlossMiniCoaxJumperCable

W9003

LOWLOSSMINICOAXJUMPERCABLE

W9003M

LowlossMiniCoaxJumperCable

W9003M

LOWLOSSMINICOAXJUMPERCABLE

XG-QFN-9003

Compressionplatedistributesforcesevenly