TMR9003 TMR Linear Sensor

Features and Benefits  Tunneling Magnetoresistance (TMR) Technology  High Sensitivity (~30mV/V/Oe)  Ultra-low Noise Spectral Density (750 pT/√Hz @1Hz)  Very-low Power Consumption  Excellent Thermal Stability  Low Hysteresis  Compatible with Wide Range of Supply Voltages  No need f

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MULTIDIMENSION

多维科技

超高灵敏度、极低噪声TMR 线性传感器

TMR9003采用了一个独特的推挽式惠斯通全桥结构设计，包含四个非屏蔽高灵敏度TMR传感器元件。当外加磁场沿平行于传感器敏感方向变化时，惠斯通全桥提供差分电压输出，并且该输出具有良好的温度稳定性。TMR9003性能优越，采用的封装形式：SOP8（6mm×5mm×1.5mm）。 （1）隧道磁电阻（TMR）技术\n（2）高灵敏度（30mV/V/Oe）\n（3）极低的本底噪声（750pT/√Hz @1Hz）\n（4）宽动态范围\n（5）超低功耗\n（6）优越的温度稳定性\n（7）极低的磁滞\n（8）宽工作电压范围\n（9）不需要置位/复位脉冲电路;

MDT

多维

MOSFETs Silicon N-channel MOS

Applications • ORing Circuits • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) (2) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

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TOSHIBA

东芝

Silicon N-channel MOS (U-MOS-H)

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TOSHIBA

东芝

.040 NPN Phototransistors

PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of Perki

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PerkinElmer