丝印：TPHR9003NC；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • ORing Circuits • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) (2) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

文件：255.72 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：ORing Circuits / Power management switches\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 220 A \nPower Dissipation PD 78 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Silicon N-channel MOS (U-MOS-H)

文件：388.52 Kbytes 页数：10 Pages

TOSHIBA

东芝

.040 NPN Phototransistors

PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of Perki

文件：21.61 Kbytes 页数：1 Pages

PerkinElmer

LOW LOSS MINI COAX JUMPER CABLE

文件：987.12 Kbytes 页数：12 Pages

pulse