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R6501Q

ONE CHIP MICROPROCESSOR

[Rockwell]

文件:2.06934 Mbytes 页数:35 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R6501QE

ONE CHIP MICROPROCESSOR

[Rockwell]

文件:2.06934 Mbytes 页数:35 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R6502END3

Nch 650V 3.05ohm(typ.) Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant Application Switching

文件:2.17617 Mbytes 页数:14 Pages

ROHM

罗姆

R6502END3TL1

Nch 650V 3.05ohm(typ.) Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant Application Switching

文件:2.17617 Mbytes 页数:14 Pages

ROHM

罗姆

R6504

PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE For an Operation in Magnetic Fields over 1Tesla 64 mm (2.5 Inch) Head-On, Fast Time Response, High Pulse Linearity 19-stage Fine Mesh Dynodes, Bialkali Photocathode

文件:33.39 Kbytes 页数:2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

R6504END3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.07 Kbytes 页数:2 Pages

ISC

无锡固电

R6504ENJ

丝印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

文件:299.23 Kbytes 页数:2 Pages

ISC

无锡固电

R6504ENX

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

文件:295.89 Kbytes 页数:2 Pages

ISC

无锡固电

R6504KND3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.76 Kbytes 页数:2 Pages

ISC

无锡固电

R6504KNJ

丝印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

文件:299.51 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • 封装:

    TO-252

  • 包装数量:

    2500

  • 最小独立包装数量:

    2500

  • 包装形态:

    Taping

  • RoHS:

    Yes

  • Package Code:

    TO-252 (DPAK)

  • JEITA Package:

    SC-63

  • Number of terminal:

    3

  • Polarity:

    Nch

  • Drain-Source Voltage VDSS[V]:

    650

  • Drain Current ID[A]:

    1.7

  • RDS(on)[Ω] VGS=10V(Typ.):

    3.05

  • RDS(on)[Ω] VGS=Drive (Typ.):

    3.05

  • Total gate charge Qg[nC]:

    6.5

  • Power Dissipation (PD)[W]:

    26

  • Drive Voltage[V]:

    10

  • Trr (Typ.)[ns]:

    240

  • Mounting Style:

    Surface mount

  • Storage Temperature (Min.)[°C]:

    -55

  • Storage Temperature (Max.)[°C]:

    150

  • Package Size [mm]:

    6.6x10.0 (t=2.4)

供应商型号品牌批号封装库存备注价格
ROC
24+/25+
6
原装正品现货库存价优
询价
ROCKWELL
PLCC44
87+
25
全新原装进口自己库存优势
询价
ROCKWEL
00/01+
DIP
2688
全新原装100真实现货供应
询价
MEXICO
1430+
DIP40
5800
全新原装,公司大量现货供应,绝对正品
询价
ROCKWELL
DIP40
8000
正品原装--自家现货-实单可谈
询价
ROCKWELL
17+
器件和集成
6200
100%原装正品现货
询价
ROCKWEL
25+
DIP
500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ROCKWELL
0512+
DIP-28
3
全新原装现货
询价
KOREA
23+
20/DIP陶瓷
5000
原装正品,假一罚十
询价
ROCKWELL
24+
DIP
1000
原装现货假一罚十
询价
更多R65供应商 更新时间2026-2-9 18:21:00