丝印：R65；WE-MXGI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：728.79 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R6520ENZ4；Package：TO-247G；Nch 650V 20A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.48662 Mbytes 页数：14 Pages

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丝印：R6520KNZ4；Package：TO-247；Nch 650V 20A Power MOSFET

Features 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching

文件：2.21731 Mbytes 页数：15 Pages

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丝印：R6524ENZ4；Package：TO-247G；Nch 650V 24A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.48331 Mbytes 页数：14 Pages

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丝印：R6524KNZ1；Package：TO-247；Nch 650V 24A Power MOSFET

lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching Obsolete

文件：2.13721 Mbytes 页数：14 Pages

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丝印：R6524KNZ4；Package：TO-247G；Nch 650V 24A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.48364 Mbytes 页数：14 Pages

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丝印：R6530ENZ4；Package：TO-247G；Nch 650V 30A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.48481 Mbytes 页数：14 Pages

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丝印：R6530KNZ4；Package：TO-247G；Nch 650V 30A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.55599 Mbytes 页数：14 Pages

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丝印：R6535ENZ4；Package：TO-247G；Nch 650V 35A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.76028 Mbytes 页数：14 Pages

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丝印：R6535KNZ4；Package：TO-247G；Nch 650V 35A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.97895 Mbytes 页数：14 Pages

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