首页 >R6012ANXFSA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10VDriveNchMOSFET Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
Nch600V12APowerMOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Nch600V12APowerMOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
GaAsOpticalReceiver45MHzto1200MHz | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.77Ωtyp.(atID=5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.77Ωtyp.(atID=5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
600V-10A-MOSFETHighSpeedPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Built-infastrecoverydiode •Lowon-resistance •Lowleakagecurrent •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
