R6012ANJ

丝印：TL；Package：LPTS；10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy Applications Switching Structure SiliconN-channelMOSFET

R6012ANJ

10V Drive Nch MOSFET; •10V驱动型 Nch 功率MOSFET;

为支持现有客户而生产的产品。不对新设计出售此产品。

R6012ANJTL

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

R6012ANX

10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R6012ANX

10V Drive Nch MOSFET; •10V驱动型 Nch 功率MOSFET;

为支持现有客户而生产的产品。不对新设计出售此产品。

R6012ANX

Nch 600V 12A Power MOSFET

R6012ANX_12

Nch 600V 12A Power MOSFET