ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

文件：1.36948 Mbytes 页数：14 Pages

XPPOWER

600 V, 12 A H-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) boost diode • Motor drive circuits • DC-AC inverters Features • Low QRR, low IR

文件：235.76 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 12 A H-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) boost diode • Motor drive circuits • DC-AC inverters Features • Low QRR, low IR

文件：235.76 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 12 A H-Series PFC Diode

General Description This device has the lowest QRR of any 600V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • Eli

文件：113.13 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 12 A H-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) boost diode • Motor drive circuits • DC-AC inverters Features • Low QRR, low IR

文件：235.76 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 12 A H-Series SiC Replacement Diode for Automotive

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. Replaces SiC diodes for similar efficiency performance in high switching frequency applications. Applications • Power Factor Corr

文件：372.5 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

超快速硅二极管VRRM     - 600 VIF(AVG)   - 3 A - 12 AQRR       - 5.9 nC - 8.9 nC

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features\r\n·Now available in TO-263 (D2PAK) package\r\n·Low QRR, Low IRRM, Low tRR\r\n·High dIF/dt capable (1000A/µs)\r\n·Soft recovery\r\n\r\nBenefits\r\n·Increases efficiency\r\n·Eliminates need for snubber circuits\r\n·Reduces EMI filter component size & count\r\n·Enables extremely fast switchin;

PI

超快速硅二极管VRRM     - 600 VIF(AVG)   - 3 A - 12 AQRR       - 5.9 nC - 8.9 nC

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features\r\n·Now available in TO-263 (D2PAK) package\r\n·Low QRR, Low IRRM, Low tRR\r\n·High dIF/dt capable (1000A/µs)\r\n·Soft recovery\r\n\r\nBenefits\r\n·Increases efficiency\r\n·Eliminates need for snubber circuits\r\n·Reduces EMI filter component size & count\r\n·Enables extremely fast switchin;

PI

符合AEC-Q101标准的汽车音频应用共阴极二极管VRRM     - 200 V - 600 VIF(AVG)   - 10 A - 20 AQRR       - 9.2 nC - 48.4 nC

Qspeed™二极管在所有硅二极管中具有最低的QRR值。其恢复特性能提高效率、降低EMI并省去缓冲电路。 特性\n• 低QRR、低IRRM、低tRR\n• 软恢复\n\n优势\n• 提高效率– 无需缓冲电路– 缩减EMI滤波元件的尺寸和数目\n• 实现极快速开关\n\n应用\n• 汽车专用– 符合AEC-Q101标准– 制造、组装和测试符合IATF 16949认证– ESD HBM 等级 H0\n\n相关信息\n在PowerEsim上模拟二极管\nPower Integrations已经与PowerEsim建立合作，可为您提供一个快速而准确地模拟Qspeed产品卓越性能的捷径。请点击下面的PowerEsim徽标链接，了解详细信息。;

PI

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 12A TO263AB

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