Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 150 W, 28 V, 1805 – 1990 MHz ·Broadband internal input and output matching\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test - Output power at P1dB = 140 W - Efficiency = 54% - Gain = 19.5 dB\n ·Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01&;

Infineon

英飞凌

High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS pro ·Broadband internal input and output matching\n·Typical Pulsed CW performance; 1990 MHz; 28 V; class AB test: Output power at P1dB = 140 W; Efficiency = 54%; Gain = 19.5 dB\n·Capable of handling 10:1 VSWR @28 V; 150 W (CW) output power\n·Integrated ESD protection: Human Body Model; Class 1C (per;

MACOM

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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