Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 150 W, 28 V, 1805 – 1990 MHz ·Broadband internal input and output matching\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test - Output power at P1dB = 140 W - Efficiency = 54% - Gain = 19.5 dB\n ·Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01&;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

文件：1.03951 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

文件：1.03951 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

文件：1.03951 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

文件：1.03951 Mbytes 页数：8 Pages

Infineon

英飞凌