PXFC191507FCV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 150 W, 28 V, 1805 – 1990 MHz

特性 Features

·Broadband internal input and output matching
·Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test - Output power at P1dB = 140 W - Efficiency = 54% - Gain = 19.5 dB
·Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16 DPCH - Output power = 32 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –31 dBc@ 5 MHz
·Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power
·Integrated ESD protection
·ESD: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Package: H-37248G-4/2, earless