Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz

Description The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching, high gain and thermallyenhanced package with earless flange. M

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Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

文件：529.64 Kbytes 页数：5 Pages

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Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz

Description The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching, high gain and thermallyenhanced package with earless flange. M

文件：707.51 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

文件：529.64 Kbytes 页数：5 Pages

CREE

科锐

High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz

The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with ·Broadband internal input and output matching\n·Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 290 W Typ\n·Typical Pulsed CW performance; 2180 MHz; 28 V; Doherty configuration; class AB: Output power at P3dB = 400 W; Power Added Efficiency at P3dB = 60.3%; Power Gain = 13.7 dB\n;

MACOM

Package：PG-HB2SOF-8-1；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：SI LDMOS AMP 370W 2110-2170MHZ

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Package：PG-HB2SOF-8-1；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：SI LDMOS AMP 370W 2110-2170MHZ

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