PXAE213708NB-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PXAE213708NB-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PXAE213708NB-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor

intended for use in multi-standard cellular power amplifier

applications in the 2110 to 2200 MHz frequency band. Features

include input and output matching, high gain and thermallyenhanced package with earless flange. Manufactured with

Wolfspeed’s advanced LDMOS process, this device provides

excellent thermal performance and superior reliability

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 290 W Typ

• Typical Pulsed CW performance, 2200 MHz, 28 V,

doherty configuration, 10 µs, 10 duty cycle, class

AB

- Output power at P3dB = 400 W

- Efficiency = 60

- Gain = 13.3 dB

• Capable of handling 10:1 VSWR @ 28 V, 54 W (1C

WCDMA) output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant