PXAD184218FV-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PXAD184218FV-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PXAD184218FV-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical

design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path

design, input and output matching, high gain and thermally-enhanced

package with earless flanges. Manufactured with Wolfspeed's advanded

LDMOS process, this device provides excellent thermal performance and

superior reliability.

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main : P1dB = 130 W Typ

- Peak : P1dB = 290 W Typ

• Typical Pulsed CW performance, 1842.5 MHz, 28 V,

Doherty configuration

- Output power at P3dB = 420 W

- Efficiency = 62

- Gain = 14 dB

• Capable of handling 10:1 VSWR @ 28 V, 110 W (WCDMA)

output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant