Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz

Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced

文件：1.10918 Mbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz

文件：339.62 Kbytes 页数：9 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz

文件：465.76 Kbytes 页数：9 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz

Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced

文件：1.10918 Mbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz

Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced

文件：1.10918 Mbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz

Infineon

英飞凌

High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with ear ·Broadband internal input and output matching\n·Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ\n·Typical Pulsed CW performance; 1842.5 MHz; 28 V; Doherty configuration: Output power at P3dB = 420 W; Efficiency = 62%; Gain = 14 dB\n·Capable of handling 10:1 VSWR @ 28 V;;

MACOM

Package：H-37275G-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RFP-LD10E

WOLFSPEED

Package：H-37275G-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37275G-6

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